Devices containing platinum-iridium films and methods of preparing such films and devices

ABSTRACT

Methods for forming platinum-iridium films, particularly in the manufacture of a semiconductor device, and devices (e.g., capacitors, integrated circuit devices, and memory cells) containing such films.

FIELD OF THE INVENTION

This invention relates to the preparation of iridium- andplatinum-containing films on substrates, particularly on semiconductordevice structures.

BACKGROUND OF THE INVENTION

Films of metals and metal oxides, particularly the heavier elements ofGroup VIII, are becoming important for a variety of electronic andelectrochemical applications. For example, high quality RuO₂ thin filmsdeposited on silicon wafers have recently gained interest for use inferroelectric memories. Many of the Group VM metal films are generallyunreactive toward metal oxides, resistant to diffusion of oxygen andsilicon, and are good conductors. Oxides of certain of these metals alsopossess these properties, although perhaps to a different extent.

Thus, films of Group VIII metals and metal oxides, particularly thesecond and third row metals (e.g., Ru, Os, Rh, Ir, Pd, and Pt) havesuitable properties for a variety of uses in integrated circuits. Forexample, they can be used in integrated circuits for electricalcontacts. They are particularly suitable for use as barrier layersbetween the dielectric material and the silicon substrate in memorydevices, such as ferroelectric memories. Furthermore, they may even besuitable as the plate (i.e., electrode) itself in capacitors. Iridiumoxide is of particular interest as a barrier layer because it is veryconductive (30-60 μΩ-cm) and is inherently a good oxidation barrier.

Capacitors are the basic charge storage devices in random access memorydevices, such as dynamic random access memory (DRAM) devices, staticrandom access memory (SRAM) devices, and now ferroelectric memory (FERAM) devices. They consist of two conductors, such as parallel metal orpolysilicon plates, which act as the electrodes (i.e., the storage nodeelectrode and the cell plate capacitor electrode), insulated from eachother by a dielectric material (a ferroelectric dielectric material forFE RAMs). It is important for device integrity that oxygen and/orsilicon not diffuse into or out of the dielectric material. This isparticularly true for ferroelectric RAMs because the stoichiometry andpurity of the ferroelectric material greatly affect charge storage andfatigue properties.

The electrodes in a DRAM cell capacitor must protect the dielectriclayer from interaction with surrounding materials, including interlayerdielectrics (e.g., BPSG), and from the harsh thermal processingencountered in subsequent steps of DRAM process flow. In order tofunction well as a bottom electrode, the electrode layer or layer stackacts as an effective barrier to the diffusion of oxygen and silicon.Oxidation of the underlying silicon will result in decreased seriescapacitance, thus degrading the cell capacitor. Platinum is one of thecandidates for use as an electrode material for high dielectriccapacitors.

Platinum, alone, however, is relatively permeable to oxygen. Onesolution is to combine (e.g., alloy) the platinum with rhodium toenhance the barrier properties of the layer. Physical vapor deposition(PVD) of a Pt-Rh alloy has been shown by H. D. Bhatt et. al., “Novelhigh temperature multi-layer electrode barrier structure forhigh-density ferroelectric memories,” Applied Physics Letters, 71, pp.719-21 (1997), to provide an improvement over pure Pt for electrodeapplications. Also, physical vapor deposition (PVD) of a Pt—Ir alloy hasbeen shown in JP 09162372.

Many storage cell capacitors are formed using high aspect ratioopenings. PVD deposition (e.g., sputtering) does not deliver a layerwhich is sufficiently conformal for formation of an electrode withinsuch a small high aspect ratio opening.

Thus, there is a continuing need for methods and materials for thedeposition of metal-containing films, such as iridium- andplatinum-containing films, which can function as barrier layers, forexample, in integrated circuits, particularly in random access memoryde&vices.

SUMMARY OF THE INVENTION

The present invention is directed to methods for forming films,particularly in the manufacture of a semiconductor device, such as aferroelectric device, and devices (e.g., capacitors, integrated circuitdevices, and memory cells) containing such films. The methods involveforming films containing both iridium and platinum on substrates, suchas semiconductor substrates or substrate assemblies during themanufacture of semiconductor structures. The film can be a pureplatinum-iridium film, an oxide film, a silicide film, a sulfide film, aselenide film, a nitride film, or the like. Typically and preferably,the iridium- and platinum-containing film (i.e., platinum-iridium film)is electrically conductive. The resultant film can be used as a barrierlayer or electrode in an integrated circuit structure, particularly in amemory device such as a ferroelectric memory device. Theplatinum-iridium film (i.e., layer) overcome some of the problemsassociated with the use of platinum alone as an electrode material.

In the context of the present invention, the term “metal-containingfilm” includes, for example, relatively pure films of iridium andplatinum (typically, in the form of alloys or solid solutions), as wellas mixtures or alloys with other Group VIII transition metals such asrhodium, nickel, palladium, iron, ruthenium, and osmium, metals otherthan those in Group VIII, metalloids (e.g., Si), or mixtures thereof.The term also includes complexes of iridium and platinum with otherelements (e.g., O, N, and S).

One preferred method of the present invention involves forming a film ona substrate, such as a semiconductor substrate or substrate assemblyduring the manufacture of a semiconductor structure. The methodincludes: providing a substrate (preferably, a semiconductor substrateor substrate assembly); providing a precursor composition that includesone or more complexes of the formula:L_(y)IrY_(z),  (Formula I)wherein: each L group is independently a neutral or anionic ligand; eachY group is independently a pi bonding ligand selected from the group ofCO, NO, CN, CS, N₂, PX₃, PR₃, P(OR)₃, AsX₃, AsR₃, As(OR)₃, SbX₃, SbR₃,Sb(OR)₃, NH_(x)R_(3-x), CNR, and RCN, wherein R is an organic group andX is a halogen; y=1 to 4; z=1 to 4; x=0 to 3; providing a precursorcomposition that includes one or more platinum complexes; and forming aplatinum-iridium-containing film from the precursor compositions on asurface of the substrate (preferably, the semiconductor substrate orsubstrate assembly), wherein the platinum-iridium-containing film hasthe formula platinum(x):iridium(1−x), wherein x is in the range of aboutabout 0.99 to about 0.01. Preferably, the precursor composition thatincludes one or more complexes of the formula L_(y)IrY_(z) is the sameas the precursor composition that includes one or more platinumcomplexes.

In certain embodiments, the process is carried out in a nonhydrogenatmosphere (i.e., an atmosphere that does not include H₂). In otherembodiments, preferably Y and L do not include halogen atoms, and morepreferably, L is not a cyclopentadienyl ligand when Y is a CO ligand.Using such methods, the complexes of Formula I are converted in somemanner (e.g., decomposed thermally) and deposited on a surface to form ametal-containing film. Thus, the film is not simply a film of thecomplex of Formula I.

Preferably, the precursor complexes are neutral complexes and may beliquids or solids at room temperature. Typically, however, they areliquids. If they are solids, they are preferably sufficiently soluble inan organic solvent or have melting points below their decompositiontemperatures such that they can be used in flash vaporization, bubbling,microdroplet formation techniques, etc. However, they may also besufficiently volatile that they can be vaporized or sublimed from thesolid state using known vapor deposition techniques including chemicalvapor deposition and atomic layer deposition techniques. Thus, theprecursor compositions of the present invention can be in solid orliquid form. As used herein, “liquid” refers to a solution or a neatliquid (a liquid at room temperature or a solid at room temperature thatmelts at an elevated temperature). As used herein, a “solution” does notrequire complete solubility of the solid; rather, the solution may havesome undissolved material, preferably, however, there is a sufficientamount of the material that can be carried by the organic solvent intothe vapor phase for chemical vapor deposition processing.

The methods described herein preferably involve the use of vapordeposition techniques such as chemical vapor deposition and atomic layerdeposition, although this is not a requirement for all embodiments.

The present invention also provides a capacitor. In one embodiment, thecapacitor includes: a first conductive layer; a dielectric material onat least a portion of the first conductive layer; and a secondconductive on the dielectric material; wherein at least one of the firstand second layers includes a vapor-deposited platinum-iridium film(i.e., a film deposited by vapor deposition methods that includesplatinum and iridium, preferably in the form of an alloy). Anotherembodiment of a capacitor includes: a first conductive layer; adielectric material on at least a portion of the first conductive layer;and a second conductive layer on the dielectric material; and aconductive barrier layer that includes a vapor-depositedplatinum-iridium film. In this latter embodiment, preferably, the firstconductive layer forms an electrode and is interposed between thedielectric material and the barrier layer. Preferably, the barrier layeris interposed between the dielectric material and the first conductivelayer.

The present invention also provides an integrated circuit that includesa capacitor. In one embodiment, the capacitor includes: a firstconductive layer; a dielectric material on at least a portion of thefirst conductive layer; and a second conductive layer on the dielectricmaterial; wherein at least one of the first and second conductive layersincludes a vapor-deposited platinum-iridium film. In another embodiment,the capacitor includes: a first conductive layer; a dielectric materialon at least a portion of the first conductive layer; a second conductivelayer on the dielectric material; and a conductive barrier layer thatincludes a vapor-deposited platinum-iridium film. In this latterembodiment, preferably, the first conductive layer forms an electrodeand is interposed between the dielectric material and the barrier layer.Preferably, the barrier layer is interposed between the dielectricmaterial and the first conductive layer.

The present invention also provides a memory cell. In one embodiment,the memory cell includes: a transistor; and a capacitor that includes abarrier layer that includes a vapor-deposited platinum-iridium film.Preferably, the capacitors are as described above.

The present invention also provides methods of fabricating capacitors.In one embodiment, a method involves: forming a first conductive layer,forming a dielectric layer on at least a portion of the first conductivelayer, and forming a second conductive layer on the dielectric layer;wherein at least one of the first and second conductive layers includesa vapor-deposited platinum-iridium film. Preferably, the conductivebarrier layer is formed by chemical vapor co-deposition of platinum andiridium precursor compositions. In another embodiment, a method forfabricating a capacitor involves: forming a first conductive layer,forming a dielectric layer on at least a portion of the first conductivelayer; forming a second conductive layer on the dielectric layer, andforming a conductive barrier layer that includes a vapor-depositedplatinum-iridium film. Preferably, the first conductive layer isinterposed between the barrier layer and the dielectric layer.Preferably, the second conductive layer is interposed between thebarrier layer and the dielectric layer.

In another embodiment of a method for fabricating a capacitor having afirst and a second electrode, the method includes: providing asubstrate; forming an insulative layer overlying a substrate; forming anopening in the insulative layer to expose the substrate; forming aconductive plug in the opening, the conductive plug forming a firstportion of the first electrode of the capacitor, the conductive plugrecessed below a surface of the insulative layer; forming a firstconductive layer in the opening and overlying the conductive plug suchthat the first conductive layer is surrounded on sidewalls by theinsulative layer, the first conductive layer forming a second portion ofthe first electrode, the first conductive layer being formed of avapor-deposited platinum-iridium film; and forming a second conductivelayer overlying the first conductive layer, the second conductive layerforming a third portion of the first electrode. Preferably, the methodfurther includes: creating a dielectric layer on the second conductivelayer, the first conductive layer substantially preventing oxidation ofthe dielectric layer; and creating the second electrode overlying thedielectric layer, the first and the second electrode and the dielectriclayer forming the capacitor. Preferably, forming the second electrodeincludes sputtering an electrically conductive material to overly thedielectric layer. Preferably, forming the first conductive layerincludes: admitting a platinum precursor composition to a chemical vapordeposition reaction chamber, admitting an iridium precursor compositionto the chemical vapor deposition reaction chamber; and applyingsufficient reaction gas to the chemical vapor deposition reactionchamber to cause co-deposition of platinum and iridium. Preferably, themethod further includes planarizing the insulative layer prior toforming the conductive plug. Preferably, forming the conductive plugincludes depositing in-situ doped polysilicon in the opening.

Preferably, in the methods and articles described herein, theplatinum-iridium films (preferably, in the form of alloys or solidsolutions) have the formula platinum(x):iridium(1−x), wherein x is inthe range of about 0.99 to about 0.01. Preferably, the dielectric layeris selected from the group consisting of tantalum pentoxide (Ta₂O₅),Barium Strontium Titanate (BST), Strontium Titanate (ST), Lead ZirconiumTitanate (PZT), Strontium Bismuth Tantalate (SBT) and Bismuth ZirconiumTitanate (BZT).

In the methods described herein, preferably, the platinum precursorcomposition includes a platinum complex selected from the groupconsisting of CpPt(Me)₃, wherein Me is a methyl group and Cp issubstituted or unsubstituted cyclopentadienyl, Pt(CO)₂Cl₂,cis-Pt(CH₃)₂[(CH₃)NC]₂, (COD)Pt(CH₃)₂, (COD)Pt(CH₃)Cl,(C₅H₅)Pt(CH₃)(CO), (acac)(Pt)(CH₃)₃, Pt(acac)₂, Pt(PF ₃)⁴, whereinCOD=1,5 cycloctadiene and acac=acetylacetonate, and mixtures thereof.More preferably, the platinum precursor composition includes CpPt(Me)₃,wherein Me is a methyl group and Cp is methyl cyclopentadienyl.Preferably, the platinum complexes do not include halogen atoms.

In the methods described herein, preferably the iridium precursorcomposition includes one or more complexes of Formula I above. Morepreferably, the iridium precursor has the formula: L_(y)IrY_(z),wherein: each L group is independently a neutral or anionic ligand; eachY group is independently a pi bonding ligand selected from the group ofCO, NO, CN, CS, N₂, PR₃, P(OR)₃, AsR₃, As(OR)₃, SbR₃, Sb(OR)₃,NH_(x)R_(3-x), CNR, and RCN, wherein R is an organic group, and x=0 to3; y=1 to 4; and z=1 to 4.

Methods of the present invention are particularly well suited forforming films on a surface of a semiconductor substrate or substrateassembly, such as a silicon wafer, with or without layers or structuresformed thereon, used in forming integrated circuits. It is to beunderstood that methods of the present invention are not limited todeposition on silicon wafers; rather, other types of wafers (e.g.,gallium arsenide wafer, etc.) can be used as well. Also, the methods ofthe present invention can be used in silicon-on-insulator technology.Furthermore, substrates other than semiconductor substrates or substrateassemblies can be used in methods of the present invention. Theseinclude, for example, fibers, wires, etc. If the substrate is asemiconductor substrate or substrate assembly, the films can be formeddirectly on the lowest semiconductor surface of the substrate, or theycan be formed on any of a variety of the layers (i.e., surfaces) as in apatterned wafer, for example. Thus, the term “semiconductor substrate”refers to the base semiconductor layer, e.g., the lowest layer ofsilicon material in a wafer or a silicon layer deposited on anothermaterial such as silicon on sapphire. The term “semiconductor substrateassembly” refers to the semiconductor substrate having one or morelayers or structures formed thereon.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional schematic of a thin layer ferroelectricmemory device having a conductive platinum-iridium-containing layerbetween the bottom electrode and underlying silicon-containing layers.

FIG. 2 is a schematic of a chemical vapor deposition system suitable foruse in the method of the present invention.

FIG. 3 is a schematic of an alternative chemical vapor deposition systemsuitable for use in the method of the present invention.

FIG. 4 is a diagrammatic cross-sectional view taken along a portion of asemiconductor wafer at an early processing step according to oneembodiment of the present invention.

FIG. 5 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 4.

FIG. 6 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 5.

FIG. 7 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 6.

FIG. 8 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 7.

FIG. 9 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 8.

FIG. 10 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 9.

FIG. 11 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 10.

FIG. 12 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 11.

FIG. 13 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 12.

FIG. 14 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 13.

FIG. 15 shows an x-ray photoelectron spectroscopy (XPS) depth profile ofco-deposited CVD Pt—Ir layer as deposited.

FIG. 16 shows an x-ray photoelectron spectroscopy (XPS) depth profile ofco-deposited CVD Pt—Ir layer after rapid thermal oxidation (RTO) at 650°C. for 60 seconds.

FIG. 17 shows an x-ray photoelectron spectroscopy (XPS) depth profile ofco-deposited CVD Pt—Ir layer after annealing at 650° C. for 60 seconds.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present invention provides structures and devices containing aniridium- and platinum-containing film (i.e., layer), preferably anelectrically conductive iridium- and platinum-containing film (e.g.,pure iridium-platinum, an oxide, sulfide, selenide, nitride, etc.), andmethods of forming these films. Specifically, the present invention isdirected to methods of manufacturing a semiconductor device,particularly a ferroelectric device, having an iridium- andplatinum-containing film. The iridium- and platinum-containing filmsformed are preferably conductive and can be used as barrier layersbetween the dielectric material and the silicon substrate in memorydevices, such as ferroelectric memories, or as the plate (i.e.,electrode) itself in the capacitors, for example. Because they aregenerally unreactive, such films are also suitable for use in opticsapplications as a reflective coating or as a high temperature oxidationbarrier on carbon composites, for example. They can be deposited in awide variety of thicknesses, depending on the desired use.

Preferred platinum-iridium films (i.e., layers) are formed on a surfaceof a substrate, preferably, a semiconductor substrate or substrateassembly during the manufacture of semiconductor structures. Morepreferably, the platinum-iridium films are formed on asilicon-containing surface. Such films may be used in the fabrication ofsemiconductor devices wherever it is necessary to prevent the diffusionof one material to an adjacent material. For example, in a contactstructure having an opening extending to a silicon-containing surface,diffusion barriers are commonly used to prevent undesirable reactions,such as the reaction of a contact material, e.g., aluminum, with thesilicon-containing surface. Also, a platinum-iridium barrier film may beused in the formation of storage cell capacitors for use insemiconductor devices such as memory devices. It may be used as anelectrode or within a stack of layers forming an electrode. One skilledin the art will recognize that various semiconductor processes andstructures for various devices (CMOS devices, memory devices, etc.),would benefit from the barrier characteristics of the barrier layers ofthe present invention. In no manner is the present invention limited tothe illustrative embodiments described herein.

A preferred platinum-iridium film according to the present inventionincludes an atomic composition of platinum(x):iridium(1−x), wherepreferably, x is in the range of about 0.01 to about 0.99. Morepreferably, x is in the range of about 0.65 to about 0.85, and mostpreferably, x is about 0.75. Preferably, the amount of iridium desiredin the platinum layer to accomplish barrier characteristics forsemiconductor devices is within a range of about 5 atom percent to about30 atom percent, and more preferably, about 10 to about 10 atom percentiridium. In other words, preferably, the atomic composition of theplatinum-iridium film is about 90% platinum and 10% iridium. Preferably,a platinum-iridium film (i.e., platinum-iridium layer) will have auniform composition throughout its thickness, although this is not anecessary requirement. For example, platinum could be deposited firstand then a combination of iridium and platinum could be deposited withincreasing amounts of iridium as the film is formed.

The thickness of the platinum-iridium layer is dependent upon theapplication for which it is used. Preferably, the thickness is in therange of about 10 Angstroms to about 10,000 Angstroms. More preferably,the thickness is in the range of about 100 Angstroms to about 500Angstroms. For example, this preferred thickness range of about 100Angstroms to about 500 Angstroms is applicable to a singleplatinum-iridium layer forming an electrode of a capacitor.

The present invention also provides methods of forming ametal-containing film, preferably using one or more iridium complexesand one or more platinum complexes. These iridium and platinum complexesare typically mononuclear (i.e., monomers in that they contain one metalper molecule), although they can be in the form of weakly bound dimers(i.e., dimers containing two monomers weakly bonded together throughhydrogen or dative bonds). Herein, such monomers and weakly bound dimersare shown as mononuclear complexes.

A preferred platinum-iridium film may be formed by vapor deposition fromprecursor compounds (typically, organometallic precursor compounds), asopposed to physical deposition (e.g., sputtering) techniques, because ofthe ability of these methods to form conformal layers. Such methodstypically involve various forms of chemical vapor deposition (CVD), forexample, atmospheric pressure chemical vapor deposition, low pressurechemical vapor deposition (LPCVD), plasma enhanced chemical vapordeposition (PECVD), or any other chemical vapor deposition technique.Another vapor deposition technique called atomic layer deposition (ALD)can also be used. This method involves the formation of a monomolecularlayer of a precursor compound, which is then contacted with a reactiongas, as disclosed in Vacuum Technology and Coating, May 2000, page 33. Apreferred deposition process includes the use of separate platinum andiridium precursors, although one compound could be envisioned to provideboth metals.

A wide variety of platinum and iridium complexes suitable for depositionvia CVD or ALD can be used in the process of the invention. The iridiumprecursor is preferably of Formula I shown below, which is shown as amonomer, although weakly bound dimers are also possible. The platinumprecursor is preferably of Formula II shown below, which is shown as amonomer, although weakly bound dimers are also possible. Although thesecompounds are preferred, a wide variety of precursors can be used aslong as they can be used in a vapor deposition process and the ligandsin the compounds are subject to removal to form zero valent metal.

The iridium and platinum complexes, which are preferably of Formulae Iand II below, are neutral complexes and may be liquids or solids at roomtemperature. Typically, they are liquids. If they are solids, they aresufficiently soluble in an organic solvent to allow for vaporization,they can be vaporized or sublimed from the solid state, or they havemelting temperatures below their decomposition temperatures. Thus, manyof the complexes described herein are suitable for use in vapordeposition techniques, preferably chemical vapor deposition (CVD)techniques, such as flash vaporization techniques, bubbler techniques,and/or microdroplet techniques. Preferred embodiments of the complexesdescribed herein are particularly suitable for low temperature CVD,e.g., deposition techniques involving substrate temperatures of about200° C. to about 400° C.

The solvents that are suitable for this application can be one or moreof the following: saturated or unsaturated linear, branched, or cyclicaliphatic (alicyclic) hydrocarbons (C₃-C₂₀, and preferably C₅-C₁₀),aromatic hydrocarbons (C₅-C₂₀, and preferably C₅-C₁₀), halogenatedhydrocarbons, silylated hydrocarbons such as alkylsilanes,alkylsilicates, ethers, polyethers, thioethers, esters, lactones,ammonia, amides, amines (aliphatic or aromatic, primary, secondary, ortertiary), polyamines, nitrites, cyanates, isocyanates, thiocyanates,silicone oils, aldehydes, ketones, diketones, carboxylic acids, water,alcohols, thiols, or compounds containing combinations of any of theabove or mixtures of one or more of the above. It should be noted thatsome precursor complexes are sensitive to reactions with proticsolvents, and examples of these noted above may not be ideal, dependingon the nature of the precursor complex. They are also generallycompatible with each other, so that mixtures of variable quantities ofthe complexes will not interact to significantly change their physicalproperties.

One preferred method of the present invention involves vaporizing aprecursor composition that includes one or more iridium complexes andone or more platinum complexes, although these complexes can be providedseparately. Also, the precursor composition can include complexescontaining other metals or metalloids. Preferably, for substrates thatinclude voids or openings, it is particularly desirable to selectprecursor compounds having similar decomposition temperatures to enablethe formation of uniform films.

The precursor composition can be vaporized in the presence of an inertcarrier gas and/or a reaction gas to form a relatively pureplatinum-iridium alloy film, or other platinum- and iridium-containingfilm. The inert carrier gas is typically selected from the groupconsisting of nitrogen, helium, argon, and mixtures thereof. In thecontext of the present invention, an inert carrier gas is one that isgenerally unreactive with the complexes described herein and does notinterfere with the formation of an platinum- and iridium-containingfilm. The reaction gas can be selected from a wide variety of gasesreactive with the complexes described herein, at least at a surfaceunder the conditions of chemical vapor deposition. Examples of reactiongases include hydrogen, oxidizing gases such as H₂O, H₂O₂, O₂, O₃, N₂O,SO₃, as well as H₂S, H₂Se, SiH₄, NH₃, N₂H₄, Si₂H₆. Preferably, thereaction gas is a nonhydrogen gas (i.e., a gas that is not H₂). Variouscombinations of carrier gases and/or reaction gases can be used in themethods of the present invention to form platinum- andiridium-containing films. Thus, the platinum- and iridium-containingfilm can include oxygen, sulfur, nitrogen, hydrogen, selenium, silicon,or combinations thereof. Such metal-containing films can be formed bysubjecting a relatively pure metal-containing film to subsequentprocessing, such as annealing or rapid thermal oxidation, to form othermetal-containing films, such as oxides or silicides, for example.

The iridium complex is of the following formula, which is shown as amonomer, although weakly bound dimers are also possible:L_(y)IrY_(z),  (Formula I)wherein: each L group is independently a neutral or anionic ligand; eachY group is independently a pi bonding ligand selected from the group ofCO, NO, CN, CS, N₂, PX₃, PR₃, P(OR)₃, AsX₃, AsR₃, As(OR)₃, SbX₃, SbR₃,Sb(OR)₃, NH_(x)R_(3-x), CNR, and RCN, wherein R is an organic group andX is a halogen; y=1 to 4 (preferably, 1); z=1 to 4 (preferably, 2 or 3,and more preferably, 2); and x=0 to 3. More preferably, the compounds ofFormula I do not include halogen atoms.

Each L ligand is a neutral or anionic ligand, which can include pibonding ligands. Preferably, L is selected from the group of dialkyl-and trialkyl-amines, polyamines (e.g.,N,N,N′N′N″-pentamethyldiethylenetriamine, diethylenetriamine),trialkylphosphines, trialkylphosphites, ethers (including linear,branched, and cyclic ethers and polyethers), unsubstituted andfluoro-substituted linear, branched, and cyclic alkyls, substituted orunsubstituted linear, branched, or cyclic (alicyclic) alkenes (includingmonoenes, dienes, trienes, bicyclic alkenes, and polyenes, such ascyclopentadiene (Cp), cyclooctadiene, benzene, toluene, and xylene),substituted or unsubstituted linear, branched, and cyclic (alicyclic)alkynes, alkoxy groups (e.g., methoxy, ethoxy, isopropoxy), allyls,carboxylates, diketonates, thiolates, halides, substituted silanes(including alkoxy substituted silanes, alkyl substituted silanes,alkenyl substituted silanes), as well as oxo, nitrile, isonitrile,cyano, and carbonyl ligands. Various combinations of such L groups canbe present in a molecule. For certain embodiments, at least twodifferent ligands are present in each complex. Preferably, neither L norY include halogen atoms. More preferably, L is methylcyclopentadienyland Y is carbonyl or nitrosyl; however, for certain embodiments, L isnot a cyclopentadienyl ligand when Y is a carbonyl ligand.

Preferably, each R group in the complexes of Formula I is a (C₁-C₈)organic group. More preferably, each R group is a (C₁-C₅) organic group.Most preferably, each R group is a (C₁-C₄) alkyl moiety.

The platinum precursor is preferably a platinum complex as shown inFormula II:CpPt(Me)₃  (Formula II)

-   -   where Me is a methyl group and Cp is cyclopentadienyl, which may        be substituted or unsubstituted (preferably, Cp is        methylcyclopentadienyl). Other platinum complexes that can be        used in addition or in place of the complex of Formula II        include, for example, Pt(CO)₂Cl₂, cis-Pt(CH₃ 2[(CH₃)NC]₂,        (COD)Pt(CH₃)₂, (COD)Pt(CH₃)Cl, (C₅H₅)Pt(CH₃)(CO),        (acac)(Pt)(CH₃)₃, Pt(acac)₂, and Pt(PF ₃)₄, wherein        COD=1,5-cycloctadiene and acac=acetylacetonate.

For certain embodiments, the precursor compositions may be used in therange of from about 1 percent to about 99 percent of an iridiumprecursor, more preferably about 5 percent to about 50 percent of aniridium precursor, and most preferably, about 10 percent of Formula I(Ir precursor) and about 90 percent of Formula II (Pt precursor),wherein the percentages are based on mole percents.

As used herein, the term “organic group” means a hydrocarbon group (withoptional elements other than carbon and hydrogen, such as oxygen,nitrogen, sulfur, and silicon) that is classified as an aliphatic group,cyclic group, or combination of aliphatic and cyclic groups (e.g.,alkaryl and aralkyl groups). In the context of the present invention,the organic groups are those that do not interfere with the formation ofa metal-containing film. Preferably, they are of a type and size that donot interfere with the formation of a metal-containing film usingchemical vapor deposition techniques. The term “aliphatic group” means asaturated or unsaturated linear or branched hydrocarbon group. This termis used to encompass alkyl, alkenyl, and alkynyl groups, for example.The term “alkyl group” means a saturated linear or branched hydrocarbongroup including, for example, methyl, ethyl, isopropyl, t-butyl, heptyl,dodecyl, octadecyl, amyl, 2-thylhexyl, and the like. The term “alkenylgroup” means an unsaturated, linear or branched hydrocarbon group withone or more carbon-carbon double bonds, such as a vinyl group. The term“alkynyl group” means an unsaturated, linear or branched hydrocarbongroup with one or more carbon-carbon triple bonds. The term “cyclicgroup” means a closed ring hydrocarbon group that is classified as analicyclic group, aromatic group, or heterocyclic group. The term“alicyclic group” means a cyclic hydrocarbon group having propertiesresembling those of aliphatic groups. The term “aromatic group” or “arylgroup” means a mono- or polynuclear aromatic hydrocarbon group. The term“heterocyclic group” means a closed ring hydrocarbon in which one ormore of the atoms in the ring is an element other than carbon (e.g.,nitrogen, oxygen, sulfur, etc.).

Substitution is anticipated on the organic groups of the complexes ofthe present invention. As a means of simplifying the discussion andrecitation of certain terminology used throughout this application, theterms “group” and “moiety” are used to differentiate between chemicalspecies that allow for substitution or that may be substituted and thosethat do not allow or may not be so substituted. Thus, when the term“group” is used to describe a chemical substituent, the describedchemical material includes the unsubstituted group and that group withO, N, Si, or S atoms, for example, in the chain (as in an alkoxy group)as well as carbonyl groups or other conventional substitution. Where theterm “moiety” is used to describe a chemical compound or substituent,only an unsubstituted chemical material is intended to be included. Forexample, the phrase “alkyl group” is intended to include not only pureopen chain saturated hydrocarbon alkyl substituents, such as methyl,ethyl, propyl, t-butyl, and the like, but also alkyl substituentsbearing further substituents known in the art, such as hydroxy, alkoxy,alkylsulfonyl, halogen atoms, cyano, nitro, amino, carboxyl, etc. Thus,“alkyl group” includes ether groups, haloalkyls, nitroalkyls,carboxyalkyls, hydroxyalkyls, sulfoalkyls, etc. On the other hand, thephrase “alkyl moiety” is limited to the inclusion of only pure openchain saturated hydrocarbon alkyl substituents, such as methyl, ethyl,propyl, t-butyl, and the like.

A preferred class of complexes of Formula I include (RC₅H₄)Ir(CO)₂,where ‘R’ represents one or more substituents such as methyl, ethyl,vinyl, etc. on the cyclopentadienyl group (Cp). This class of complexesof Formula I is particularly advantageous because they are liquids andcan be delivered to the CVD chamber using simple bubbler techniques.

Various combinations of the complexes described herein can be used in aprecursor composition. Thus, as used herein, a “precursor composition”refers to a liquid or solid that includes one or more complexes of theformulas described herein optionally mixed with one or more complexes offormulas other than those described herein. The precursor compositioncan also include one or more organic solvents suitable for use in achemical vapor deposition system, as well as other additives, such asfree ligands, that assist in the vaporization of the desired compounds.

The complexes described herein can be used in precursor compositions forvapor deposition techniques, preferably, chemical vapor deposition (CVD)or atomic layer deposition (ALD). Alternatively, certain complexesdescribed herein can be used in other deposition techniques, such assputtering, spin-on coating, and the like. Typically, those complexescontaining R groups with a low number of carbon atoms (e.g., 1-4 carbonatoms per R group) are suitable for use with vapor depositiontechniques. Those complexes containing R groups with a higher number ofcarbon atoms (e.g., 5-12 carbon atoms per R group) are generallysuitable for spin-on or dip coating. Preferably, however, vapordeposition techniques are desired because they are more suitable fordeposition on semiconductor substrates or substrate assemblies,particularly in contact openings which are extremely small and requireconformally filled layers of metal.

For the preparation of iridium films, at least one complex of Formula Ican be combined with another complex in a precursor composition. Forexample, CpIr(CO)₂ can be combined with CpPtMe₃ to form an Ir/Pt film.

The complexes used in the present invention can be prepared by a varietyof methods known to one of skill in the art. For example, (C₅H₅)Ir(CO)₂can be prepared by reaction of chlorotricarbonyl iridium(I) withcyclopentadienyl-lithium in THF solvent, and MeCpPtMe₃ is commerciallyavailable from Strem Chemicals.

As stated above, the use of the iridium complexes and platinum complexesand methods of forming conductive platinum- and iridium-containing filmsof the present invention are beneficial for a wide variety of thin filmapplications in integrated circuit structures, particularly those usinghigh dielectric materials or ferroelectric materials. For example, suchapplications include capacitors such as planar cells, trench cells(e.g., double sidewall trench capacitors), stacked cells (e.g., crown,V-cell, delta cell, multi-fingered, or cylindrical container stackedcapacitors), as well as field effect transistor devices.

A specific example of where a film formed from the complexes of thepresent invention would be useful is the ferroelectric memory cell 10 ofFIG. 1. The memory cell 10 includes a ferroelectric material 11, such asa lead zirconate titanate (PZT) or lithium niobate film, between twoelectrodes 12 and 13, which are typically made of platinum, althoughother metals such as gold or aluminum can also be used. The bottomelectrode 13 is typically in contact with a silicon-containing layer 14,such as an n-type or p-type silicon substrate, silicon dioxide, glass,etc. A conductive platinum-iridium layer 15 prepared from a complex ofFormula I is positioned between the bottom electrode 13 and thesilicon-containing layer 14 to act as a barrier to diffusion of atomssuch as silicon into the electrode and ferroelectric material.Alternatively, or additionally, the two electrodes can be made ofplatinum-iridium.

Methods of the present invention can be used to deposit ametal-containing film, preferably a metal alloy film, on a variety ofsubstrates, such as a semiconductor wafer (e.g., silicon wafer, galliumarsenide wafer, etc.), glass plate, etc., and on a variety of surfacesof the substrates, whether it be directly on the substrate itself or ona layer of material deposited on the substrate as in a semiconductorsubstrate assembly. The film is deposited upon decomposition (typically,thermal decomposition) of an iridium complex of Formula I (preferably,in combination with a platinum complex), preferably one that is either avolatile liquid, a sublimable solid, or a solid that is soluble in asuitable solvent that is not detrimental to the substrate, other layersthereon, etc. Preferably, however, solvents are not used; rather, thetransition metal complexes are liquid and used neat. Methods of thepresent invention preferably utilize vapor deposition techniques, suchas flash vaporization, bubbling, etc.

A typical chemical vapor deposition (CVD) system that can be used toperform the process of the present invention is shown in FIG. 2. Thesystem includes an enclosed chemical vapor deposition chamber 10, whichmay be a cold wall-type CVD reactor. As is conventional, the CVD processmay be carried out at pressures of from atmospheric pressure down toabout 10⁻³ torr, and preferably from about 10 torr to about 0.1 torr. Avacuum may be created in chamber 10 using turbo pump 12 and backing pump14.

One or more substrates 16 (e.g., semiconductor substrates or substrateassemblies) are positioned in chamber 10. A constant nominal temperatureis established for the substrate, preferably at a temperature of about100° C. to about 600° C., and more preferably at a temperature of about200° C. to about 400° C. Substrate 16 may be heated, for example, by anelectrical resistance heater 18 on which substrate 16 is mounted. Otherknown methods of heating the substrate may also be utilized.

In this process, if only one precursor composition is used, theprecursor composition 40, which contains one or more iridium complexes(and/or other metal or metalloid complexes), is stored in liquid form (aneat liquid at room temperature or at an elevated temperature if solidat room temperature) in vessel 42. A source 44 of a suitable inert gasis pumped into vessel 42 and bubbled through the neat liquid (i.e.,without solvent) picking up the precursor composition and carrying itinto chamber 10 through line 45 and gas distributor 46. Additional inertcarrier gas or reaction gas may be supplied from source 48 as needed toprovide the desired concentration of precursor composition and regulatethe uniformity of the deposition across the surface of substrate 16.Valves 50-55 are opened and closed as required.

If two precursor compositions are used in this process, such as when aplatinum-iridium film is formed, the precursor composition 240, whichcontains one or more platinum complexes (and/or other metal or metalloidcomplexes), is stored in liquid form (a neat liquid at room temperatureor at an elevated temperature if solid at room temperature) in vessel242. A source 244 of a suitable inert gas is pumped into vessel 242 andbubbled through the neat liquid (i.e., without solvent) picking up theprecursor composition and carrying it into chamber 10 through line 245and gas distributor 46. Additional inert carrier gas or reaction gas maybe supplied from source 248 as needed to provide the desiredconcentration of precursor composition and regulate the uniformity ofthe deposition across the surface of substrate 16. Valves 250-253 and255 are opened and closed as required.

Preferably, for the preparation of a platinum-iridium film, within thereaction chamber, the partial pressure of iridium precursor gas is keptsufficiently low such that the iridium deposited is within the rangesdescribed herein for forming the preferred composition of the film. Thispartial pressure may be controlled by controlling the flow of thecarrier gas, e.g., helium, through the bubbler containing the iridiumprecursor or through control of other parameters of the process, such astemperature and pressure of the bubbler.

Generally, the precursor composition or compositions, and optionalreaction gases, are pumped into the CVD chamber 10 at a flow rate ofabout 1 sccm (standard cubic centimeters) to about 1000 sccm. Thesemiconductor substrate is exposed to the precursor composition at apressure of about 0.001 torr to about 100 torr for a time of about 0.01minute to about 100 minutes. In chamber 10, the precursor compositionwill form an adsorbed layer on the surface of the substrate 16. As thedeposition rate is temperature dependent in a certain temperature range,increasing the temperature of the substrate will increase the rate ofdeposition. Typical deposition rates are about 10 Angstroms/minute toabout 1000 Angstroms/minute. The carrier gas containing the precursorcomposition(s) is terminated by closing valve 53 (and 253).

An alternative CVD system that can be used to perform the process of thepresent invention is shown in FIG. 3. The system includes an enclosedchemical vapor deposition chamber 90, which may be a cold wall-type CVDreactor, in which a vacuum may be created using turbo pump 92 andbacking pump 94. One or more substrates 96 (e.g., semiconductorsubstrates or substrate assemblies) are positioned in chamber 90.Substrate 96 may be heated as described with reference to FIG. 2 (forexample, by an electrical resistance heater 98).

In this process, one or more solutions 60 of one or more precursoriridium and precursor platinum complexes (and/or other metal ormetalloid complexes) are stored in vessels 62. The solutions aretransferred to a mixing manifold 64 using pumps 66. The resultantprecursor composition (or compositions) containing one or more precursorcomplexes and one or more organic solvents is then transferred alongline 68 to vaporizer 70, to volatilize the precursor composition. Asource 74 of a suitable inert gas is pumped into vaporizer 70 forcarrying volatilized precursor composition into chamber 90 through line75 and gas distributor 76. Reaction gas may be supplied from source 78as needed. As shown, a series of valves 80-85 are opened and closed asrequired. Similar pressures and temperatures to those described withreference to FIG. 2 can be used.

Alternatives to such methods include an approach wherein the precursorcomposition is heated and vapors are drawn off and controlled by a vapormass flow controller, and a pulsed liquid injection method as describedin “Metalorganic Chemical Vapor Deposition By Pulsed Liquid InjectionUsing An Ultrasonic Nozzle: Titanium Dioxide on Sapphire from Titanium(IV) Isopropoxide,” by Versteeg, et al., Journal of the American CeramicSociety, 78, 2763-2768 (1995). The complexes described herein are alsoparticularly well suited for use with vapor deposition systems asdescribed in copending application U.S. Ser. No. 08/20,710 entitled“Method and Apparatus for Vaporizing Liquid Precursor compositions andSystem for Using Same,” filed on Oct. 2, 1996. Generally, one methoddescribed therein involves the vaporization of a precursor compositionin liquid form (neat or solution). In a first stage, the precursorcomposition is atomized or nebulized generating high surface areamicrodroplets or mist. In a second stage, the constituents of themicrodroplets or mist are vaporized by intimate mixture of the heatedcarrier gas. This two stage vaporization approach provides areproducible delivery for precursor compositions (either in the form ofa neat liquid or solid dissolved in a liquid medium) and providesreasonable growth rates, particularly in device applications with smalldimensions.

Various combinations of carrier gases and/or reaction gases can be usedin certain methods of the present invention. They can be introduced intothe chemical vapor deposition chamber in a variety of manners, such asdirectly into the vaporization chamber or in combination with theprecursor composition.

Although specific vapor deposition processes are described by referenceto the figures, methods of the present invention are not limited tobeing used with the specific vapor deposition systems shown. Variousvapor deposition process chambers or reaction chambers can be used,including hot wall or cold wall reactors, atmospheric or reducedpressure reactors, as well as plasma enhanced reactors. Furthermore,methods of the present invention are not necessarily limited to anyspecific vapor deposition techniques.

A specific example of a fabrication process for a capacitor according toone embodiment of the present invention is described below. It is to beunderstood, however, that this process is only one example of manypossible configurations and processes utilizing the iridium-containinglayers (e.g., Pt—Ir barriers or electrodes) of the invention. Forexample, in the process described below, a Pt—Ir material (preferably,alloy) is utilized as a barrier below the bottom electrode of acapacitor. Alternatively, the top electrode may also include a Pt—Irbarrier material.

Furthermore, doped poly or other conventional electrode materials may beprovided with a Pt—Ir layer atop the electrode, between the electrodeand the dielectric, in both locations, or the Pt—Ir material itself mayform one or both electrodes in lieu of conventional electrode materials.In addition, in the process described below the bit line is formed overthe capacitor. A buried bit-line process could also be used. As anotherexample, the plugs under the capacitors formed by the following processcould be eliminated. Also, dry or wet etching could be used rather thanchemical mechanical polishing. The invention is not intended to belimited by the particular process described below.

Referring to FIG. 4, a semiconductor wafer fragment at an earlyprocessing step is indicated generally by reference numeral 100. Thesemiconductor wafer 100 includes a bulk silicon substrate 112 with fieldisolation oxide regions 114 and active areas 116, 118, 120. Word lines122, 124, 126, 128 have been constructed on the wafer 100 in aconventional manner. Each word line consists of a lower gate oxide 130,a lower poly layer 132, a higher conductivity silicide layer 134 and aninsulating silicon nitride cap 136. Each word line has also beenprovided with insulating spacers 138, also of silicon nitride.

Two FETs are depicted in FIG. 4. One FET includes two active areas(source/drain) 116, 118 and one word line (gate) 124. The second FETincludes two active areas (source/drain) 118, 120 and a second word line(gate) 126. The active area 118 common to both FETs is the active areaover which a bit line contact will be formed.

Referring to FIG. 5, a thin film 140 of nitride or TEOS is provided atopthe wafer 100. Next a layer of insulating material 142 is deposited. Theinsulating material preferably consists of borophosphosilicate glass(BPSG). The insulating layer 142 is subsequently planarized bychemical-mechanical polishing (CMP).

Referring to FIG. 6, a bit line contact opening 144 and capacitoropenings 146 have been formed through the insulating layer 142. Theopenings 144, 146 are formed through the insulating layer 142 byphotomasking and dry chemical etching the BPSG relative to the thinnitride or TEOS layer 140. Referring now to FIG. 7, a layer 150 ofconductive material is deposited to provide conductive material withinthe bit line contact opening 144 and capacitor openings 146. Theconductive layer 150 is in contact with the active areas 116, 118, 120.An example of the material used to form layer 150 is in situ arsenic orphosphorous doped poly. Referring now to FIG. 8, the conductive layer150 is etched away to the point that the only remaining material formsplugs 150 over the active areas 116, 118,120.

Referring now to FIG. 9, a thin barrier layer 151 of a Pt—Ir film isformed as a barrier layer atop conductive layer 150. Barrier layer 151is co-deposited by CVD to form a conformal layer which protects thesubsequently deposited capacitor dielectric against diffusion fromunderlying plug 150 and other surrounding materials. Perhaps moreimportantly for some applications of the invention, barrier layer 151also protects the underlying plug 150 from diffusion of oxygen from thecapacitor dielectric. Chemical vapor deposition techniques are desiredbecause they are more suitable for deposition on semiconductorsubstrates or substrate assemblies, particularly in contact openingswhich are extremely small and require conformally filled layers ofmetal.

Following chemical vapor codeposition of barrier layer 151, a layer 152of conductive material that will eventually form one of the electrodesof the capacitor is deposited at a thickness such that the capacitoropenings 146 are not closed off. Referring to FIG. 10, the layer 152 maybe formed of various refractive metals, conductive metal oxides, metalnitrides, noble metals and may include, such as, Pt, Rh, Ir, Ru, Os, Pd,IrO₂, RhO₂, RuO₂, Ta, TiN, TaN, Ti and others. The conductive layer 152is in electrical contact with the previously formed plugs 150 or, aspreviously mentioned, the Pt—Ir layer will itself be the lowerelectrode.

Referring to FIG. 11, the portion of the conductive layer 152 above thetop of the BPSG layer 142 is removed through a planarized etchingprocess, thereby electrically isolating the portions of layer 152remaining in the bit line contact opening 144 and capacitor openings146. Referring now to FIG. 12, a capacitor dielectric layer 154 isprovided over conductive layer 152 and capacitor openings 146.

Dielectric layer 154 is deposited with a thickness such that theopenings 146 are again not completely filled. Dielectric layer 154 mayinclude tantalum pentoxide (Ta₂O₅). Other suitable dielectric materialssuch as Strontium Titanate (ST), Barium Strontium Titanate (BST), LeadZirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT) and BismuthZirconium Titanate (BZT) may also be used. Dielectric layer 154 may bedeposited by a low-pressure CVD process using Ta(OC₂H₅)₅ and O₂ at about430° C., and may be subsequently annealed in order to reduce leakagecurrent characteristics.

A second conductive electrode layer 156 is then deposited by CVD overthe dielectric layer 154, again at a thickness which less thancompletely fills the capacitor openings 146. The second conductive layer156 may include TiN, Pt, or other conventional electrode materials, suchas many of those previously described for use as conductive layer 152.In addition to serving as the top electrode or second plate of thecapacitor, the second conductive layer 156 also forms theinterconnection lines between the second plates of all capacitors.

Referring to FIG. 13, the second conductive layer 156 and underlyingcapacitor dielectric layer 154 are patterned and etched such that theremaining portions of each group of the first conductive layer 152,capacitor dielectric layer 154, and second conductive layer 156 over thebit line contact opening 144 and capacitor openings 146 are electricallyisolated from each other. In this manner, each of the active areas 116,118, 120 are also electrically isolated (without the influence of thegate). Furthermore, at least a portion of the barrier layer 151 and thefirst conductive layer 152 in contact with the plug 150 over the bitline active area 118 are outwardly exposed.

Referring now to FIG. 14, a bit line insulating layer 158 is providedover the second conductive layer 156. The bit line insulating layer 158preferably includes BPSG. The BPSG is typically reflowed by conventionaltechniques, i.e., heating to about 800° C. Other insulating layers suchas PSG, or other compositions of doped SiO₂ may similarly be employed asthe insulating layer 158.

A bit line contact opening 160 is patterned through the bit lineinsulating layer 158 such that the barrier layer 151 above conductiveplug 150 is once again outwardly exposed. Then a bit line contactmaterial is provided in the bit line contact opening 160 such that thebit line contact material is in electrical contact with the outwardlyexposed portion of the barrier layer 151 above conductive plug 150.Thus, the plug 150 over the active area 118 common to both FETs acts asa bit line contact. The DRAM array and associated circuitry may then becompleted by a variety of well established techniques, such asmetalization, and attachment to peripheral circuitry.

The Pt—Ir barrier layer and electrode materials according to theinvention also have excellent conductivity, and therefor reducedepletion effects and enhance frequency response. The materials possessexcellent barrier properties for protection of cell dielectrics andsubstrate during oxidation/recrystallization steps for dielectrics andduring BPGS reflow and other high temperature steps after capacitorformation. In addition, the Pt—Ir barriers according to the inventionalso substantially prevent diffusion to protect cell dielectrics frominteraction with silicon and other surrounding materials which maydegrade the dielectric materials or produce an additional SiO₂dielectric layer; the series capacitance of SiO₂ would drasticallyreduce overall cell capacitance. Thus, the barriers/electrodes of theinvention are not limited to use as barrier layers for bottomelectrodes, but may also be employed both as top and bottom electrodes,and as additional barrier layers applied to any other top and/or bottomelectrodes.

In addition, the use of the platinum and iridium precursor compositionsand methods of forming co-deposited Pt—Ir layers of the presentinvention are beneficial for a wide variety of thin film applications inintegrated circuit structures, particularly those using high dielectricmaterials. For example, such applications include capacitors such asplanar cells, trench cells (e.g., double sidewall trench capacitors),stacked cells (e.g., crown, V-cell, delta cell, multi-fingered, orcylindrical container stacked capacitors). The platinum-iridium layersare particularly effective at preventing silicon diffusion and oxygendiffusion.

The advantages of co-depositing Ir with Pt for the barrier layer 151will now be discussed with references to FIGS. 15-17 in the Examplesbelow.

EXAMPLES

The following examples are offered to further illustrate the variousspecific and preferred embodiments and techniques. It should beunderstood, however, that many variations and modifications may be madewhile remaining within the scope of the present invention.

Synthesis of {(CH₃)C₅H₄}Ir(CO)₂

In an inert-atmosphere glove box, a flask was charged with 2.0 g (6.4mmol) of chlorotricarbonyliridium (I) (Strem Chemicals, Inc.,Newburyport, Mass.). The compound was suspended in 100 mL of hexanes andstirred during the addition of a solution of methylcyclopentadienyllithium (12.8 mL of 0.5 M in THF). The flask was equipped with acondenser and the mixture was refluxed for 24 hours. The solvent wasthen removed in vacuo. The crude product was purified by vacuumdistillation; an orange colored liquid product collected was at 58° C.at approximately 200 mTorr. The product was characterized by IR and NMRspectroscopy.

CVD of a Platinum-Iridium Film

A substrate of silicon that had been thermally oxidized was placed intoa CVD chamber and heated to 380° C. A bubbler containing{(CH₃)C₅H₄)Ir(CO)₂ was connected such that carrier gas would passthrough the liquid precursor and take vapor of the compound into thechamber. The bubbler was heated to 45° C. and the lines connecting thebubbler to the chamber were heated to 55° C. to prevent condensation. Asecond bubbler containing {(CH₃)C₅H₄}Pt(CH₃)₂ (MeCpPtMe₃), which wasobtained from Strem Chemicals, was connected such that carrier gas wouldpass through the liquid precursor and take vapor of the compound intothe chamber. The bubbler was heated to 33° C. and the lines connectingthe bubbler to the chamber were heated to 45° C. to preventcondensation. Using a carrier gas flow of 30 sccm He for the platinumprecursor and 7 sccm He for the iridium precursor, and a reaction gasflow of 50 sccm N₂O, with a platinum precursor bubbler pressure of 3torr and temperature of 33° C. and an iridium precursor bubbler pressureof 3 torr and temperature of 45° C., and a chamber pressure of 3 torrand deposition temperature of 380° C. at the wafer surface, a film wasdeposited for 15 minutes. A small lab scale reaction CVD chamber wasused with a glass research bubbler, the latter of which was obtainedfrom Technical Glass Service (Boise, Id.).

A depth profile was attained by using an XPS device available under thetrade designation of PhI (Φ) 5600 from Physical Electronics (EdenPrairie, Minn.). The operating conditions for obtaining the profileinclude x-ray source of 350 W, monochromatic Al k_(α)(hV=1486.6 eV); 45degree extraction; 800 μm extraction aperture. Sputtering was performedwith a 4 keV Argon ion beam rastored over a 3×3 mm area. The sputtertime for the depth profile of FIG. 15 was 11 minutes, the sputter timefor the depth profile of FIG. 16 was 17 minutes, and the sputter timefor the depth profile of FIG. 17 was 45 minutes.

FIG. 15 shows an XPS depth profile of a Pt—Ir film, produced by CVDco-deposition of Pt and Ir between a layer of Ta₂O₅ and TiN. The iridiumconcentration in the Pt—Ir layer is about 25 atom percent.

FIG. 16 shows an XPS depth profile of a Pt—Ir film, produced by CVDco-deposition of Pt and Ir between a layer of Ta₂O₅ and TiN (after RTOat 650° C. for 60 seconds) for comparison of oxygen barrier properties.The iridium concentration in the Pt—Ir layer is about 25 atom percent.The Ta₂O₅ surface had oxygen present at a level of about 65 atompercent, but the underlying TiN layer had only about 10-20 atom percentoxygen present.

FIG. 17 shows an XPS depth profile of a Pt layer, produced by CVDdeposition of Pt between a layer of Ta₂O₅ and TiN, (after annealing at650° C. for 60 seconds) for comparison of oxygen barrier properties. TheTa₂O₅ surface had oxygen present at a level of 70 atom percent, but theunderlying TiN layer had only about 10-20 atom percent oxygen present,showing little degradation of the as deposited film.

The foregoing detailed description and examples have been given forclarity of understanding only. No unnecessary limitations are to beunderstood therefrom. The invention is not limited to the exact detailsshown and described, for variations obvious to one skilled in the artwill be included within the invention defined by the claims. Thecomplete disclosures of all patents, patent documents, and publicationslisted herein are incorporated by reference, as if each wereindividually incorporated by reference.

1-19. Cancelled
 20. A capacitor comprising: a first conductive layer; adielectric material on at least a portion of the first conductive layer;and a second conductive layer on the dielectric material; wherein atleast one of the first and second layers comprises a vapor-depositedplatinum-iridium film.
 21. The capacitor of claim 20 wherein thevapor-deposited platinum-iridium film has the formulaplatinum(x):iridium(1−x), wherein x is in the range of about 0.99 toabout 0.01.
 22. The capacitor of claim 21 wherein x is in the range ofabout 0.65 to about 0.85.
 23. The capacitor of claim 22 wherein x isabout 0.75.
 24. The capacitor of claim 21 wherein the dielectric layeris selected from the group consisting of tantalum pentoxide, BariumStrontium Titanate, Strontium Titanate, Lead Zirconium Titanate,Strontium Bismuth Tantalate, and Bismuth Zirconium Titanate.
 25. Acapacitor comprising: a first conductive layer; a dielectric material onat least a portion of the first conductive layer; and a secondconductive layer on the dielectric material; and a conductive barrierlayer comprising a vapor-deposited platinum-iridium film.
 26. Thecapacitor of claim 25 wherein the first conductive layer forms anelectrode and is interposed between the dielectric material and thebarrier layer.
 27. The capacitor of claim 26 wherein the barrier layeris interposed between the dielectric material and the first conductivelayer.
 28. The capacitor of claim 25 wherein the vapor-depositedplatinum-iridium film has the formula platinum(x):iridium(1−x), whereinx is in the range of about 0.99 to about 0.01.
 29. The capacitor ofclaim 28 wherein x is in the range of about 0.65 to about 0.85.
 30. Thecapacitor of claim 29 wherein x is about 0.75.
 31. An integrated circuitcomprising a capacitor, wherein the capacitor comprises: a firstconductive layer; a dielectric material on at least a portion of thefirst conductive layer; and a second conductive layer on the dielectricmaterial; wherein at least one of the first and second conductive layerscomprises a vapor-deposited platinum-iridium film.
 32. The integratedcircuit of claim 31 wherein the vapor-deposited platinum-iridium filmhas the formula platinum(x):iridium(1−x), wherein x is in the range ofabout 0.99 to about 0.01.
 33. The integrated circuit of claim 32 whereinx is in the range of about 0.65 to about 0.85.
 34. The integratedcircuit of claim 33 wherein x is about 0.75.
 35. The integrated circuitof claim 31 wherein the dielectric layer is selected from the groupconsisting of tantalum pentoxide, Barium Strontium Titanate, StrontiumTitanate, Lead Zirconium Titanate, Strontium Bismuth Tantalate, andBismuth Zirconium Titanate.
 36. An integrated circuit comprising acapacitor, wherein the capacitor comprises: a first conductive layer; adielectric material on at least a portion of the first conductive layer;a second conductive layer on the dielectric material; and a conductivebarrier layer comprising a vapor-deposited platinum-iridium film. 37.The integrated circuit of claim 36 wherein the first conductive layerforms an electrode and is interposed between the dielectric material andthe barrier layer.
 38. The integrated circuit of claim 36 wherein thebarrier layer is interposed between the dielectric material and thefirst conductive layer.
 39. The integrated circuit of claim 36 whereinthe vapor-deposited platinum-iridium film has the formulaplatinum(x):iridium(1−x), wherein x is in the range of about 0.99 toabout 0.01.
 40. The integrated circuit of claim 39 wherein x is in therange of about 0.65 to about 0.85.
 41. The integrated circuit of claim40 wherein x is about 0.75.
 42. A memory cell comprising a transistorand a capacitor comprising a barrier layer comprising a vapor-depositedplatinum-iridium film.
 43. The memory cell of claim 42 wherein thecapacitor comprises: a first conductive layer; a dielectric material onat least a portion of the first conductive layer; a second conductivelayer on the dielectric material; and a barrier layer comprising avapor-deposited platinum-iridium film.
 44. The memory cell of claim 43wherein the capacitor comprises: a first conductive layer; a dielectricmaterial on at least a portion of the first conductive layer; and asecond conductive layer on the dielectric material; wherein at least oneof the first and second layers comprises a vapor-depositedplatinum-iridium film.
 45. The memory cell of claim 43 wherein thevapor-deposited platinum-iridium film has the formulaplatinum(x):iridium(1−x), wherein x is in the range of about 0.99 toabout 0.01.
 46. The memory cell of claim 45 wherein x is in the range ofabout 0.65 to about 0.85.
 47. The memory cell of claim 46 wherein x isabout 0.75. 48-80. Cancelled